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PD -91783A
IRG4BC20FD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard D2Pak package
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.66V
@VGE = 15V, IC = 9.0A
n-cha nn el
Benefits
* Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs
D 2 Pak
Max.
600 16 9.0 64 64 8.0 60 20 60 24 -55 to +150
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient ( PCB Mounted,steady-state)* Weight
Typ.
--- --- --- 1.44
Max.
2.1 3.5 80 ---
Units
C/W g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
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1
4/24/2000
IRG4BC20FD-S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 600 -- V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage -- 0.72 VCE(on) Collector-to-Emitter Saturation Voltage -- 1.66 -- 2.06 -- 1.76 Gate Threshold Voltage 3.0 -- VGE(th) VGE(th)/TJ Temperature Coeff. of Threshold Voltage -- -11 gfe Forward Transconductance T 2.9 5.1 Zero Gate Voltage Collector Current -- -- ICES -- -- VFM Diode Forward Voltage Drop -- 1.4 -- 1.3 IGES Gate-to-Emitter Leakage Current -- -- V(BR)CES Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, I C = 1.0mA 2.0 IC = 9.0A VGE = 15V -- V IC = 16A See Fig. 2, 5 -- IC = 9.0A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC = 9.0A 250 A VGE = 0V, VCE = 600V 1700 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 8.0A See Fig. 13 1.6 IC = 8.0A, TJ = 150C 100 nA VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Diode Peak Reverse Recovery Current -- -- Diode Reverse Recovery Charge -- -- Diode Peak Rate of Fall of Recovery -- During tb -- Typ. 27 4.2 9.9 43 20 240 150 0.25 0.64 0.89 41 22 320 290 1.35 7.5 540 37 7.0 37 55 3.5 4.5 65 124 240 210 Max. Units Conditions 40 IC = 9.0A 6.2 nC VCC = 400V See Fig. 8 15 VGE = 15V -- TJ = 25C -- ns IC = 9.0A, VCC = 480V 360 VGE = 15V, RG = 50 220 Energy losses include "tail" and -- diode reverse recovery. -- mJ See Fig. 9, 10, 18 1.3 -- TJ = 150C, See Fig. 10, 11, 18 -- ns IC = 9.0A, VCC = 480V -- VGE = 15V, RG = 50 -- Energy losses include "tail" and -- mJ diode reverse recovery. -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz 55 ns TJ = 25C See Fig. 90 TJ = 125C 14 IF = 8.0A 5.0 A TJ = 25C See Fig. 8.0 TJ = 125C 15 VR = 200V 138 nC TJ = 25C See Fig. 360 TJ = 125C 16 di/dt = 200A/s -- A/s TJ = 25C See Fig. -- TJ = 125C 17
2
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IRG4BC20FD-S
3.0
For both: Mounted on PCB
LOAD CURRENT (A)
2.0
S q u a re w a v e : 6 0% of rate d volta ge
D uty cy cle: 50% TJ = 125C T s ink = 90C 55C G ate drive as specified P ow e r Dis sip ation = 1.75W
1.0
I
Id e a l d io d e s
0.0 0.1 1 10 100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
TJ = 25 o C TJ = 150 o C
10
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
TJ = 150 o C
10
TJ = 25 oC
1 1
V = 15V 20s PULSE WIDTH
GE 10
1 5 6 7 8 9
V = 50V 5s PULSE WIDTH
CC 10 11 12 13 14
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRG4BC20FD-S
16 3.0
12
VCE , Collector-to-Emitter Voltage(V)
V = 15V 80 us PULSE WIDTH
GE
IC = 18 A
Maximum DC Collector Current(A)
8
2.0
IC = 9.0 A 9A
4
IC = 4.5 A
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
10
Thermal Response (Z thJC )
1
0.50 0.20 0.10 0.05
0.1
0.02 0.01
SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01
0.01 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1
P DM t1 t2 1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20FD-S
1000
800
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 9.0A
16
C, Capacitance (pF)
600
Cies
12
400
8
200
C oes C res
4
0 1 10 100
0 0 5 10 15 20 25 30
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
0.90
Total Switching Losses (mJ)
0.86
Total Switching Losses (mJ)
V CC = 480V V GE = 15V TJ = 25 C 0.88 I C = 9.0A
10
RG = 50Ohm VGE = 15V VCC = 480V
IC = 18 A IC = 9.0 A 9
1
0.84
IC = 4.5 A
0.82
0.80
0.78 0 10 20 30 40 50
0.1 -60 -40 -20
0
20
40
60
80 100 120 140 160
RG , Gate Resistance (Ohm)
TJ , Junction Temperature ( C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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IRG4BC20FD-S
3.0
2.0
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
RG TJ VCC 2.5 VGE
= 50Ohm = 150 C = 480V = 15V
100
VGE = 20V T J = 125 oC
1.5
10
1.0
0.5
0.0 0 4 8 12 16
SAFE OPERATING AREA
1 20 1 10 100 1000
I C , Collector-to-emitter Current (A)
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
10
TJ = 1 50 C TJ = 1 25 C TJ = 25 C
1
0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
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IRG4BC20FD-S
100 100
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
80
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
IF = 16 A
t rr - (ns)
60
I F = 8 .0A
I IR R M - (A )
I F = 1 6A
10
40
IF = 8 .0 A I F = 4.0 A
I F = 4 .0 A
20
0 100
d i f /d t - (A / s)
1000
1 100
1000
di f /dt - (A /s)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
400
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
300
d i(re c )M /d t - (A / s )
Q R R - (n C )
I F = 16 A
200
I F = 4.0 A
1000
IF = 8 .0 A I F = 1 6A
I F = 8 .0A
100
IF = 4.0 A
0 100 100 100
di f /dt - (A /s)
1000
1000
d i f /d t - (A / s )
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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IRG4BC20FD-S
Same ty pe device as D .U.T.
80% of Vce
430F D .U .T.
90% Vge VC 90% 10%
t d(off)
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
10% IC 5% t d(on)
tr Eon E ts = (Eon +Eoff )
tf t=5s Eoff
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id ddt Ic t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 Vce d E o n = V ce ieIc t dt t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d idIct dt Vd d t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC20FD-S
V g G AT E S IG NA L DE V ICE U ND E R T E S T CU R RE N T D.U .T .
VO LT A G E IN D .U.T .
CU R RE N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 100 0V 50V 600 0 F 10 0V Vc *
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
Tape & Reel Information
D2Pak
TR R
1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 )
1.6 0 (.0 6 3 ) 1.5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 )
F E E D D I RE C T IO N
1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 )
1 1 .6 0 (.45 7 ) 1 1 .4 0 (.44 9 ) 1 5.4 2 (.6 0 9 ) 1 5.2 2 (.6 0 1 )
2 4 .3 0 (.95 7 ) 2 3 .9 0 (.94 1 )
TRL
1 0 .9 0 (.42 9 ) 1 0 .7 0 (.42 1 ) 1.7 5 (.0 6 9 ) 1.2 5 (.0 4 9 ) 1 6 .1 0 (.63 4 ) 1 5 .9 0 (.62 6 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 )
F E E D D IR E C T I ON
1 3.50 (.53 2) 1 2.80 (.50 4)
2 7.4 0 ( 1.0 7 9) 2 3.9 0 ( .94 1 ) 4
3 3 0.00 ( 14 .1 73 ) M AX.
6 0.00 (2 .3 62) M IN .
N O TE S : 1. C O MF O R M S T O EIA- 41 8. 2. C O N TR O LL IN G D IM EN SIO N : M IL LIM ET ER . 3. D IM EN S IO N M EAS UR ED @ H U B. 4. IN C L U D E S FL AN G E D IST O R T IO N @ O U T ER E D G E.
26 .4 0 (1 .03 9 ) 24 .4 0 (.9 61 ) 3
3 0.4 0 (1.19 7) MA X. 4
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9
IRG4BC20FD-S
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 50 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
Notes:
D2Pak Package Outline
1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 1 .4 0 (.0 5 5 ) M A X. -A2 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -B 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6 .4 7 (.2 5 5 ) 6 .1 8 (.2 4 3 ) 1 5 .4 9 (.6 1 0 ) 1 4 .7 3 (.5 8 0 ) 5 .2 8 (.2 0 8 ) 4 .7 8 (.1 8 8 ) 1 .4 0 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 5 .0 8 (.2 0 0 ) 1 .3 9 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 2 .7 9 (.1 1 0 ) 2 .2 9 (.0 9 0 ) 2 .6 1 (.1 0 3 ) 2 .3 2 (.0 9 1 ) 8 .8 9 (.3 5 0 ) R E F. 1 0 .1 6 (.4 0 0 ) REF .
1 .7 8 (.0 7 0 ) 1 .2 7 (.0 5 0 )
1
3
3X
0 .9 3 (.0 3 7 ) 3X 0 .6 9 (.0 2 7 ) 0 .2 5 (.0 1 0 ) M BAM
0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 )
M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .4 3 (.4 5 0 )
NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S .
L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OURCE
8 .8 9 (.3 5 0 ) 1 7 .7 8 (.7 0 0 )
3 .8 1 (.1 5 0 ) 2 .0 8 (.0 8 2 ) 2X 2 .5 4 (.1 0 0 ) 2X
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00
10
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